3446-xxxx Datasheet (332.20 KB)
3446-xxxx
3M Interconnect Solutions
332.20 KB
Latch / ejector header.
w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
w
t a .D
S a
e h
U 4 t e
.c
m o
w
w
w
.D
a t a
e h S
4 t e
U
m o .c
.
📁 Related Datasheet
3440-5202 - Latch / Ejector Header
(3M Interconnect Solutions)
w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
w
t a .D
S a
e h
U 4 t e
.c
m o
w
w
w
.D
a t a
e h S
4 t e
U
m o .c
.
3440-xxxx - Latch / Ejector Header
(3M Interconnect Solutions)
w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
w
t a .D
S a
e h
U 4 t e
.c
m o
w
w
w
.D
a t a
e h S
4 t e
U
m o .c
.
3400 - 5-Series Chipset
(Intel)
Intel® 5 Series Chipset and Intel® 3400 Series Chipset
Datasheet
January 2012
Document Number: 322169-004
INFORMATION IN THIS DOCUMENT IS PROVIDED IN.
3400 - N-Channel MOSFET
(GOFORD)
GOFORD
DESCRIPTION
The 3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as .
3400 - N-Channel MOSFET
(Doingter)
Description：
This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a w.
3401 - P-Channel Enhancement Mode Power MOSFET
(H&M Semiconductor)
HM3401
P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The HM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge a.
3401 - P-Channel MOSFET
(CXW)
P-channel Enhancement Mode MOSFET
The uses advanced trench technology to provide excellent RDS(ON) and low gate charge. Thi.
3401 - P-channel-enhanced MOS field-effect transistor
(ChipSourceTek)
3401
RDS(ON), Vgs@-4.5V, Ids@-1.0A = 48mΩ@TYP RDS(ON), Vgs@-2.5V, Ids@-0.5A = 75mΩ@TYP
P MOS
1
SOT-23
D
Drain
D
3
k 1
2
e G
S
.
