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ACE7407A

P-Channel Enhancement Mode MOSFET

ACE7407A Features

* -20V/-3.4A, RDS (ON)= 100mΩ@VGS=-4.5V

* -20V/-2.4A, RDS (ON)= 125mΩ@VGS=-2.5V

* -20V/-1.7A, RDS (ON)= 150mΩ@VGS=-1.8V

* -20V/-1.0A, RDS (ON)= 220mΩ@VGS=-1.25V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and

ACE7407A General Description

The ACE7407A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such a.

ACE7407A Datasheet (383.28 KB)

Preview of ACE7407A PDF

Datasheet Details

Part number:

ACE7407A

Manufacturer:

ACE Technology

File Size:

383.28 KB

Description:

P-channel enhancement mode mosfet.

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ACE7407A P-Channel Enhancement Mode MOSFET ACE Technology

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