ACE7407A Datasheet (ACE Technology) - P-Channel Enhancement Mode MOSFET

ACE7407A, P-Channel Enhancement Mode MOSFET

The ACE7407A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such a

ACE7407A Features

* -20V/-3.4A, RDS (ON)= 100mΩ@VGS=-4.5V

* -20V/-2.4A, RDS (ON)= 125mΩ@VGS=-2.5V

* -20V/-1.7A, RDS (ON)= 150mΩ@VGS=-1.8V

* -20V/-1.0A, RDS (ON)= 220mΩ@VGS=-1.25V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and