SSC8027GS6 Datasheet, Mosfet, AFSEMI

PDF File Details

Part number:

SSC8027GS6

Manufacturer:

AFSEMI

File Size:

222.52kb

Download:

📄 Datasheet

Description:

P-channel enhancement mode mosfet. Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state res

TAGS

SSC8027GS6

AFSEMI

📁 Related Datasheet

SSC8020GS6 - N-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8020GS6 N-Channel Enhancement Mode MOSFET  Features  VDS 20V VGS ±8V RDSon TYP 140mR@4V5 180mR@2V5 270mR@1V8 ID 750mA   General Descri.

SSC8020GS8 - N-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8020GS8 N-Channel Enhancement Mode MOSFET  Features  VDS 20V VGS ±8V RDSon TYP 140mR@4V5 180mR@2V5 270mR@1V8 ID 0.6A   General Descrip.

SSC8020GS9 - N-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8020GS9 N-Channel Enhancement Mode MOSFET  Features  VDS VGS RDSon TYP ID 240mR@4V5 280mR@2V5 20V ±8V 0.4A 410mR@1V8  450mR@1V5  G.

SSC8022GS6 - N-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8022GS6 N-Channel Enhancement Mode MOSFET  Features VDS 20V VGS ±12V RDSon TYP 35mR@4V5 45mR@2V5 ID 3.5A  Applications  Load Switch  Por.

SSC8023GS6 - P-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8023GS6 P-Channel Enhancement Mode MOSFET  Features VDS -20V VGS ±12V RDSon TYP 60mR@-4V5 75mR@-2V5 ID -3A  Applications  Load Switch  P.

SSC8025GS6 - P-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8025GS6 P-Channel Enhancement Mode MOSFET with ESD Protection  Features VDS VGS -20V ±8V RDSon TYP 50m R@-4V5 60m R@-2V5 70m R@-1V8 96m R@-1V5.

SSC8028GT3 - N-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8028GT3 N-Channel Enhancement Mode MOSFET  Features VDS VGS RDSon TYP ID  Applications  Desktop Computer  Notebook 20V ±16V 11mR@10V 16.

SSC8028GT8 - N-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8028GT8 N-Channel Enhancement Mode MOSFET  Features VDS VGS RDSon TYP ID  Applications  Desktop Computer  Notebook 20V ±16V 11mR@10V 16.

SSC8029GN2 - P-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8029GN2 P-Channel Enhancement Mode MOSFET  Features VDS -20V VGS ±12V RDSon TYP 21mR@-4V5 26mR@-2V5 35mR@-1V8 45mR@-1V5 ID -6.5A  Applicat.

SSC8029GS6A - P-Channel Enhancement Mode MOSFET (AFSEMI)
SSC8029GS6A P-Channel Enhancement Mode MOSFET  Features VDS -20V VGS ±12V RDSon TYP 21mR@-4V5 26mR@-2V5 35mR@-1V8 45mR@-1V5 ID -6.5A  Applica.