SSC8027GS6 P-Channel Enhancement Mode MOSFET

Description

SSC8027GS6 P-Channel Enhancement Mode MOSFET * .
Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance.

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SSC8027GS6 Datasheet Preview — Preview of SSC8027GS6 PDF

Datasheet Specifications

Part number: SSC8027GS6
Manufacturer: AFSEMI
File Size: 222.52 KB
Datasheet: SSC8027GS6-AFSEMI.pdf
Description: P-Channel Enhancement Mode MOSFET

Features

* VDS -20V VGS ±8V RDSon TYP 100mR@-4V5 119mR@-2V5 ID -2A

Applications

* Load Switch
* Portable Devices
* DCDC conversion
* Pin Configuration

SSC8027GS6 Distributors

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SSC8027GS6 P-Channel Enhancement Mode MOSFET AFSEMI

AFSEMI SSC8027GS6-like datasheet