Datasheet Details
| Part number | SSC8039GQ4 | 
|---|---|
| Manufacturer | AFSEMI | 
| File Size | 417.13 KB | 
| Description | P-Channel Enhancement Mode MOSFET | 
| Datasheet | 
        
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| Part number | SSC8039GQ4 | 
|---|---|
| Manufacturer | AFSEMI | 
| File Size | 417.13 KB | 
| Description | P-Channel Enhancement Mode MOSFET | 
| Datasheet | 
        
           | 
    
Bottom View This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance.This device is particularly suited for low voltage power management requiring a wild range of given voltage ratings(4.5V~25V) such as load switch and battery protection. Package Information SSC-1V0 Package: DFN3X3 http://www.afsemi.com 1/5 Analog Future SSC8039GQ4 Absolute Maximum Ratings @TA = 25℃ unless otherwise noted Parameter
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