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SSC8428GSB Dual N-Channel Enhancement Mode MOSFET

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Description

SSC8428GSB Common Drain N-Channel Enhancement Mode MOSFET * .
The SSC8428GSB combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

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Datasheet Specifications

Part number
SSC8428GSB
Manufacturer
AFSEMI
File Size
318.89 KB
Datasheet
SSC8428GSB-AFSEMI.pdf
Description
Dual N-Channel Enhancement Mode MOSFET

Features

* VDS VGS 20V ±12V RDSon TYP 13mR@10V 15mR@4V5 ID 7.5A

Applications

* Li-ion battery protection
* Load switch
* Pin configuration Top View Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance High Power and Current handling capability Fully Characterized Avalanche Voltage and Current

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