AGM210AP Datasheet - AGMSEMI

MOSFET

* BVDSS RDSON ID 20V 8.5mΩ 25A

* Advance high cell density Trench technology

* Low RDS(ON) to minimize conductive loss

* Low Gate Charge for fast switching PDFN3.3

* 3.3 Pin Configuration

* Low Thermal resistance

* 100% Avalanche tested

* 100% DVDS tested

* Ap

AGM210AP

AGMSEMI

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Mosfet.

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AGM210AP MOSFET AGMSEMI

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