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AGM4N65F - MOSFET

AGMSEMI

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Datasheet Details

Part number	AGM4N65F
Manufacturer	AGMSEMI
File Size	690.80 KB
Description	MOSFET
Datasheet	AGM4N65F-AGMSEMI.pdf

AGM4N65F Product details

Description

The AGM4N65F combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

Features

s BVDSS RDSON ID 650V 2Ω 4A.
Advance high cell density Trench technology.
Low RDS(ON) to minimize conductive loss.
Low Gate Charge for fast switching TO-220F Pin Configuration.
Low Thermal resistance.
100% Avalanche test.
100% DVDS tested.

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Published: Dec 28, 2024 |