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AGM4N65F MOSFET

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Description

AGM4N65F * General .
The AGM4N65F combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

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Datasheet Specifications

Part number
AGM4N65F
Manufacturer
AGMSEMI
File Size
690.80 KB
Datasheet
AGM4N65F-AGMSEMI.pdf
Description
MOSFET

Features

* BVDSS RDSON ID 650V 2Ω 4A
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching TO-220F Pin Configuration
* Low Thermal resistance
* 100% Avalanche test
* 100% DVDS tested

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