N08M1618L1A Datasheet - AMI SEMICONDUCTOR

N08M1618L1A 8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM

3 A0 A3 A5 A17 NC A14 A12 A9 2 OE UB I/O10 I/O11 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE1 I/O1 I/O3 I/O4 I/O5 WE A11 6 CE2 I/O0 I/O2 VCC VSS I/O6 I/O7 NC Pin Name A0-A18 WE CE1, CE2 OE LB UB I/O0-I/O15 VCC VSS VCCQ NC Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enabl.

AMI Semiconductor, Inc. ULP Memory Solutions 670 North McCarthy Blvd. Suite 220 Milpitas, CA 95035 PH: 408-935-7777, FAX: 408-935-7770 N08M1618L1A Advance Information www.DataSheet4U.com 8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K × 16 bit Overview The N08M1618L1A is an integrated memory device intended for non life-support medical applications. This device is a 8 megabit memory organized as 524,288 words by 16 bits. The device is designed and fabricated using AMI Semiconductor’s .

N08M1618L1A Features

* Dual voltage for Optimum Performance: Vccq - 2.3 to 3.6 Volts Vcc - 1.4 to 2.2 Volts

* Very low standby current 0.5µA at 1.8V and 37 deg C

* Very low operating current 1.0mA at 1.8V and 1µs (Typical)

* Very low Page Mode operating current 0.5mA at 1.8V and 1µs (Typi

N08M1618L1A Datasheet (225.52 KB)