N08M1618L1A 8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM

AMI SEMICONDUCTOR

Description

AMI Semiconductor, Inc.ULP Memory Solutions 670 North McCarthy Blvd.Suite 220 Milpitas, CA 95035 PH: 408-935-7777, FAX: 408-935-7770 N08M1618L1A Ad.
3 A0 A3 A5 A17 NC A14 A12 A9 2 OE UB I/O10 I/O11 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE1 I/O1 I/O3 I/O4 I/O5 WE A11 6 CE2 I/O0 I/O2 VCC VSS I/O6 I.

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Datasheet Specifications

Part number: N08M1618L1A
Manufacturer: AMI SEMICONDUCTOR
File Size: 225.52 KB
Datasheet: N08M1618L1A_AMISEMICONDUCTOR.pdf
Description: 8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM

Features

* Dual voltage for Optimum Performance: Vccq - 2.3 to 3.6 Volts Vcc - 1.4 to 2.2 Volts
* Very low standby current 0.5µA at 1.8V and 37 deg C
* Very low operating current 1.0mA at 1.8V and 1µs (Typical)
* Very low Page Mode operating current 0.5mA at 1.8V and 1µs (Typi

Applications

* This device is a 8 megabit memory organized as 524,288 words by 16 bits. The device is designed and fabricated using AMI Semiconductor’s advanced CMOS technology with reliability inhancements for medical users. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) t

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N08M1618L1A 8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM AMI SEMICONDUCTOR

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