A65H83181 Datasheet - AMIC Technology

A65H83181 128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM

The A65H73361 and A65H83181 are 128k words by 36 bits and 256k words by 18 bits late write synchronous 4Mb SRAMS built using high performance CMOS process. The differential clock are used to control the timing of read/write operation and all internal operations are selftimed. The positive edge trigg.

A65H83181 Features

* n n n n 128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output Fast access times: 2.5/3.0/3.5ns 128k x 36 or 256k x 18 organizations CMOS technology Register to register synchronous operation with selftimed late write n Single +3.3V ±5% power supply n Individual byte wri

A65H83181 Datasheet (530.68 KB)