1N831 - SILICON MIXER DIODE

ASI

General Description

Diode Designed for Applications Operating From 2.0 to 4.0 GHz.

Key Features

High burnout resistance.
Low noise figure.
Hermetically sealed package.

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1N831 silicon mixer diode by ASI - Datasheet Preview

Datasheet Details

Part number	1N831
Manufacturer	ASI
File Size	66.34 KB
Description	SILICON MIXER DIODE
Datasheet	1N831 Datasheet

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SILICON MIXER DIODE 1N831 DESCRIPTION: The ASI 1N831 is a Silicon Mixer Diode Designed for Applications Operating From 2.0 to 4.0 GHz. FEATURES: • High burnout resistance • Low noise figure • Hermetically sealed package MAXIMUM RATINGS IF 20 mA VR 1.0 V PDISS 2.0 (ERGS) @ TC = 25 °C TJ -55 °C to +150 °C TSTG -55 °C to +150 °C PACKAGE STYLE DO- 7 NONE CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS NF f = 3060 MHz PLO = 1.0 mW NFif = 1.5 dB RL = 100 Ω IF = 30 MHz NR f = 3060 MHz PLO = 1.0 mW NFif = 1.5 dB RL = 100 Ω IF = 30 MHz LC f = 3060 MHz PLO = 0.5 mW Z IF RL = 22 Ω f = 1000 Hz frange MINIMUM TYPICAL 300 2.0 MAXIM 8.3 1.5 5.5 500 4.0 UNITS dB --- dB Ω GHz A D V A N C E D S E M I C O N D U C T O R, I N C.