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1N831 SILICON MIXER DIODE

1N831 Description

SILICON MIXER DIODE 1N831 .
The ASI 1N831 is a Silicon Mixer Diode Designed for Applications Operating From 2. High burnout resistance.

1N831 Features

* High burnout resistance
* Low noise figure
* Hermetically sealed package MAXIMUM RATINGS IF 20 mA VR 1.0 V PDISS 2.0 (ERGS) @ TC = 25 °C TJ -55 °C to +150 °C TSTG -55 °C to +150 °C PACKAGE STYLE DO- 7 NONE CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS NF

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Datasheet Details

Part number
1N831
Manufacturer
ASI
File Size
66.34 KB
Datasheet
1N831-ASI.pdf
Description
SILICON MIXER DIODE

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SILICON MIXER DIODE ASI
ASI 1N831-like datasheet