1N831
1N831 is SILICON MIXER DIODE manufactured by ASI.
SILICON MIXER DIODE
DESCRIPTION:
The ASI 1N831 is a Silicon Mixer
Diode Designed for Applications Operating From 2.0 to 4.0 GHz.
Features
:
- High burnout resistance
- Low noise figure
- Hermetically sealed package
MAXIMUM RATINGS
IF 20 mA
VR 1.0 V
PDISS
2.0 (ERGS) @ TC = 25 °C
TJ -55 °C to +150 °C
TSTG
-55 °C to +150 °C
PACKAGE STYLE DO- 7
NONE
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
NF f = 3060 MHz PLO = 1.0 mW
NFif = 1.5 dB
RL = 100 Ω
IF = 30 MHz
NR f = 3060 MHz PLO = 1.0 mW
NFif = 1.5 dB
RL = 100 Ω
IF = 30...
