2N6093 Datasheet - ASI

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2N6093 NPN SILICON RF POWER TRANSISTOR

www.DataSheet4U.com 2N6093 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE TO-217 .
The 2N6093 is a High Gain Linear RF Power Amplifier Used in Class A or Class B Applications With Individual Ballast Emitter Resistor and Built in Tem.

2N6093_ASI.pdf

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Datasheet Details

Part number:

2N6093

Manufacturer:

ASI

File Size:

56.12 KB

Description:

NPN SILICON RF POWER TRANSISTOR

Applications

* With Individual Ballast Emitter Resistor and Built in Temperature Sensing Diode. MAXIMUM RATINGS IC VCE PDISS TJ TSTG θJC O O 10 A 35 V 83.3 W @ TC = 75 C -65 C to +200 C -65 C to +200 C 1.50 C/W O O O O ¼-28 UNF Thread 1 = Emitter & Diode Cathode 2 = Collector 3 = Base 4 = Diode Anode NONE CH

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