ASC100N1200MT3 Datasheet - AST

ASC100N1200MT3 - 1200V N-Channel MOSFET

Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficie.

ASC100N1200MT3 Features

* High Speed Switching with Low Capacitances

* High Blocking Voltage with Low RDS(on)

* Simple to drive with Standard Gate Drive

* 100% avalanche tested

* Maximum junction temperature of 150°C

* ROHS Compliant Application

* EV Charging

* DC-AC Inverters

* High Vol

ASC100N1200MT3-AST.pdf