ASC30N650MT4
Description
Silicon Carbide (Si C) MOSFET use a pletely new technology that provide superior switching performance and higher reliability pared to Silicon. In addition, the low ON resistance and pact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.
Features
- High Speed Switching with Low Capacitances
- High Blocking Voltage with Low RDS(on)
- Optimized package with separate driver source pin
- Easy to parallel and simple to drive
- ROHS pliant, Halogen free
Application
- EV Charging
- DC/DC Converters
- Switch Mode Power Supplies
- Power Factor Correction Modules
- Solar PV inverters
Ordering Information
Part Number ASC30N650MT4
Marking ASC30N650MT4
Package TO-247
Packaging Tube
Absolute Maximum Ratings(Tc=25℃)
Symbol
Parameter
Drain-Source Voltage
Drain Current(continuous)at Tc=25℃
Drain...
