ASR50N1200D88 Datasheet - AST

ASR50N1200D88 - 1200V N-Channel MOSFET

Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon.

In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.

Consequently, system benefits include highest efficien

ASR50N1200D88 Features

* High Speed Switching with Low Capacitances

* High Blocking Voltage with Low RDS(on)

* Simple to drive with Standard Gate Drive

* 100% avalanche tested

* Maximum junction temperature of 150°C

* ROHS Compliant Application

* EV Charging

* DC-AC Inverters

* High Vol

Datasheet Details

ASR50N1200D88

AST

575.80 KB

1200v n-channel mosfet.

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