AT04750C
Features
- Advanced high cell density Trench technology
- Super Low Gate Charge
- Excellent Cd V/dt effect decline
- Green Device Available
40V N-Channel MOSFET
Product Summary
VDS ID RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V)
6.5 mΩ
9 mΩ
Applications
- High Frequency Point-of-Load,Synchronous Buck Converter
- Networking DC-DC Power System
- Load Switch，LED applications
TO-251 Top View
Absolute Maximum Ratings(TC=25℃, unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current1 Continuous Drain Current1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range
Symbol VDS VGS
ID@TC=25℃ ID@TC=100℃
IDM EAS IAS PD@TC=25℃ TSTG
Thermal Characteristics
Parameter Thermal Resistance Junction-Ambient1 Thermal Resistance Junction-Case1
Symbol RθJA RθJC
Rating 40 ±20 75 58 150
110.5 47 52.1
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