AT06700L - 60V N-Channel MOSFET

ATC Semiconductor

Datasheet Details

Product Summary.
Advanced high cell density Trench technology.
Super Low Gate Charge.
Excellent CdV/dt effect decline.
100% EAS Guaranteed.
Green Device Available.
ESD：HBM ≥ 200V,＜400V CDM＞250V,＜500V VDS ID RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 60 V 70 A 8.5 mΩ 12 mΩ.

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Published: Aug 27, 2025 |