AT03115AT
Features
Product Summary
- Advanced high cell density Trench technology
- Super Low Gate Charge
- Excellent Cd V/dt effect decline
- 100% EAS Guaranteed
- Green Device Available
Applications
- High Frequency Point-of-Load,Synchronous Buck Converter
- Networking DC-DC Power System
- Load Switch
VDS ID RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V)
2.5 mΩ
3.6 mΩ
DFN5X6-8L Top View
Top View
S1 S2 S3 G4
8D 7D 6D 5D
Absolute Maximum Ratings(TC=25℃, unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current1 Continuous Drain Current1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range
Thermal Characteristics
Symbol VDS VGS
ID@TC=25℃ ID@TC=100℃
IDM EAS IAS PD@TC=25℃ TSTG
Parameter Thermal Resistance Junction-Ambient1 Thermal Resistance Junction-Case1
Symbol RθJA RθJC
Rating 30 ±20 115 73 141 101 45 50
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