AT49BV8192A
ATMEL
201.06kb
8-megabit (1m x 8/512k x 16) flash memory. The AT49BV008A(T) and AT49BV/LV8192A(T) are 3-volt, 8-megabit Flash memories organized as 1,048,576 words of 8 bits each or 512K wor
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AT49BV8192 - 8-Megabit (512K x 16) CMOS Flash Memory
(ATMEL)
Features
• Low Voltage Operation – 2.7V Read
– 5V Program/Erase • Fast Read Access Time - 120 ns • Internal Erase/Program Control • Sector Architectur.
AT49BV8192AT - 8-megabit (1M x 8/512K x 16) Flash Memory
(ATMEL)
Features
• Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Erase/Program Control .
AT49BV8192T - 8-Megabit (512K x 16) CMOS Flash Memory
(ATMEL)
Features
• Low Voltage Operation – 2.7V Read
– 5V Program/Erase • Fast Read Access Time - 120 ns • Internal Erase/Program Control • Sector Architectur.
AT49BV8011 - 8-megabit (512K x 16/1M x 8) 3-volt Only Flash Memory
(ATMEL)
..
Features
• Single Supply for Read and Write: 2.7V to 3.3V (BV), 3.0V to 3.3V (LV) • Access Time – 90 ns • Sector Erase Architectu.
AT49BV8011T - 8-megabit (512K x 16/1M x 8) 3-volt Only Flash Memory
(ATMEL)
..
Features
• Single Supply for Read and Write: 2.7V to 3.3V (BV), 3.0V to 3.3V (LV) • Access Time – 90 ns • Sector Erase Architectu.
AT49BV802A - 8-megabit (512K x 16/ 1M x 8) 3-volt Only Flash Memory
(ATMEL Corporation)
..
Features
• Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • •
– Fifteen 3.
AT49BV802AT - 8-megabit (512K x 16/ 1M x 8) 3-volt Only Flash Memory
(ATMEL Corporation)
..
Features
• Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • •
– Fifteen 3.
AT49BV802D - 8-megabit (512K x 16/ 1M x 8) 3-volt Only Flash Memory
(ATMEL Corporation)
..
Features
• Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture
– Fifteen 32K Wor.
AT49BV802DT - 8-megabit (512K x 16/ 1M x 8) 3-volt Only Flash Memory
(ATMEL Corporation)
..
Features
• Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture
– Fifteen 32K Wor.
AT49BV001 - 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
(ATMEL)
Features
• Single Supply for Read and Write: 2.7 to 3.6V (BV), 3.0 to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Program Control and Timer •.