AHK6030L Datasheet (Advanced Analogic Technologies)

AHK6030L, 30V N-Channel Power MOSFET

Utilizing Analogic Tech’s state-of-the-art TrenchDMOSâ process, the AHK6030L sets a new standard in current handling capability and efficiency for surface mount power MOSFETs.

Gate charge and RDS(ON) have been optimized and package inductance minimized to provide high efficiency for DC-DC converters

AHK6030L Features

* =

* = PWMSwitch TM VDS(MAX) = 30V ID(MAX)(a) = 44 A @ 25°C IAPP(MAX) = 17A in typical computer application Low Gate Charge Low RDS(ON): 13.5 mΩ=(max), 9.5 mΩ=(typ) @VGS = 10V 20 mΩ=(max), 14 mΩ=(typ) @VGS = 4.5V Applications

* = DC-DC conve