9971GD
Description
Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
D1
D2
G1 S1
G2 S2
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current
1 3
Rating 60 +25 5 3.2 20 2 0.016 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient
Value 62.5
Unit ℃/W
Data and specifications subject to change without notice
1 200809223
AP9971GD
Electrical Characteristics@Tj=25o C(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold...
