AP06P20GJ-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics

Description

Advanced Power Electronics Corp.AP06P20GJ-HF Preliminary P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement.
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cos.

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Datasheet Specifications

Part number: AP06P20GJ-HF
Manufacturer: Advanced Power Electronics
File Size: 92.01 KB
Datasheet: AP06P20GJ-HF-AdvancedPowerElectronics.pdf
Description: P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* and suited for low voltage applications. BVDSS RDS(ON) ID -200V 1.4Ω -4.7A G D S TO-251(J) Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS

AP06P20GJ-HF Distributors

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AP06P20GJ-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

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