Datasheet Details
- Part number
- AP2312GN
- Manufacturer
- Advanced Power Electronics
- File Size
- 100.52 KB
- Datasheet
- AP2312GN_AdvancedPowerElectronics.pdf
- Description
- N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2312GN Description
AP2312GN Pb Free Plating Product Advanced Power Electronics Corp.▼ Capable of 2.5V gate drive ▼ Lower on-resistance ▼ Surface mount package S D N-C.
SOT-23
G
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-.
AP2312GN Applications
* D
G S
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage
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Parameter
Rating 20 ±12
Units V V A A A W W/ ℃ ℃ ℃
Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Cu
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