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AP2318GEN-HF-3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

Advanced Power Electronics Corp.AP2318GEN-HF-3 N-channel Enhancement-mode Power MOSFET Capable of 2.5V Gate Drive Small Package Outline Surface Mou.
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

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Applications

* where a small board footprint is required. This device is well suited for use in applications such as load switches. D S SOT-23 G Absolute Maximum Ratings Symbol VDS VGS ID at T A =25°C ID at TA= 70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Cu

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