Datasheet4U Logo Datasheet4U.com

AP2613GYT-HF - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

📥 Download Datasheet

Preview of AP2613GYT-HF PDF
datasheet Preview Page 2 datasheet Preview Page 3

AP2613GYT-HF Product details

Description

S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.The PMPAK® 3x3 package is special for DC-DC converters application and lower 1.0mm profile with backside heat sink.BVDSS RDS(ON) ID -20V 9mΩ -15.4A D D D D S S S G PMPAK® 3x3 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous

📁 AP2613GYT-HF Similar Datasheet

  • AP2602 - Octave Remote Resistor-programmable Temperature Switches (BCD Semiconductor)
  • AP2603Y - P CHANNEL ENHANCEMENT MODE POWER MOSFET (ETC)
  • AP2605Y - P CHANNEL ENHANCEMENT MODE POWER MOSFET (ETC)
  • AP260N15MP - 150V N-Channel Enhancement Mode MOSFET (APM)
  • AP2623 - P-Channel Enhancement-Mode MOSFETs SMD (HAOHAI)
  • AP2625GY - Dual P-Channel MOSFET (VBsemi)
  • AP265 - Traditional Aerospace Contactor (TE)
  • AP265P - Traditional Aerospace Contactor (TE)
Other Datasheets by Advanced Power Electronics
Published: |