AP4501AGEM-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for all mercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
N-CH P-CH
G1
BVDSS RDS(ON) ID BVDSS RDS(ON) ID
D1
1 G2
S1
30V 20mΩ
8A -30V 60mΩ -4.6A
D2
S2
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS Drain-Source Voltage
30 -30
VGS ID@TA=25℃ ID@TA=70℃ IDM
Gate-Source Voltage
Drain Current3 , VGS @ 10V Drain Current3 , VGS @ 10V Pulsed Drain Current1
+20 +20 8.0 -4.6 6.3 -3.7 20 -20
PD@TA=25℃ TSTG TJ
Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
2 -55 to 150 -55 to 150
W ℃ ℃
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Data and...
