AP4501AGM
Description
Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for mercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
N-CH P-CH
BVDSS RDS(ON) ID BVDSS RDS(ON) ID
D1 G1 G2
S1
30V 28mΩ
7A -30V 50mΩ -5.3A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃
TSTG TJ
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Rating N-channel P-channel
30 -30 +20 +20 7.0 -5.3 5.8 -4.7 20 -20
2 0.016 -55 to 150 -55 to 150
Units
V V A A A W W/℃ ℃ ℃
Thermal Data
Symbol Rthj-a
Parameter Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to...
