AP4501AGM-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for mercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
N-CH P-CH
BVDSS RDS(ON) ID BVDSS RDS(ON) ID
D1
G1 G2 S1
30V 28mΩ
7A -30V 50mΩ -5.3A
D2
S2
.
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS Drain-Source Voltage
30 -30
VGS ID@TA=25℃ ID@TA=70℃ IDM
Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1
+20 +20 7.0 -5.3 5.8 -4.7 20 -20
PD@TA=25℃
Total Power Dissipation Linear Derating Factor
2 0.016
W W/℃
TSTG TJ
Storage Temperature Range Operating Junction Temperature Range
-55 to 150 -55 to 150
℃ ℃
Thermal Data
Symbol Rthj-a
Parameter Maximum Thermal Resistance,...
