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AP55T10GS-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP55T10GS-HF Description

AP55T10GS-HF Halogen-Free Product Advanced Power Electronics Corp.▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ R.
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cos.

AP55T10GS-HF Applications

* and suited for switching power applications. GD S TO-263(S) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics
Advanced Power Electronics AP55T10GS-HF-like datasheet