AP73T02GJB N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Advanced Power Electronics

Description

Advanced Power Electronics Corp.AP73T02GJB Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D ▼ Simple Drive Requ.
AP73T02 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching.

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Datasheet Specifications

Part number: AP73T02GJB
Manufacturer: Advanced Power Electronics
File Size: 59.96 KB
Datasheet: AP73T02GJB-AdvancedPowerElectronics.pdf
Description: N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Applications

* The TO-251S short lead package is preferred for all commercialindustrial through-hole applications without lead-cutted. BVDSS RDS(ON) ID 25V 9mΩ 57A GD S TO-251S(JB) Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ ID@TC=100℃ ID

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AP73T02GJB N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Advanced Power Electronics

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