AP9475M
AP9475M is N-CHANNEL MOSFET manufactured by Advanced Power Electronics Corp.
tion
The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all mercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 60 ±25 6.9 5.5 30 2.5 0.02 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Continuous Drain Current Total Power Dissipation Linear Derating Factor
Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
Value Max. 50
Unit ℃/W
Data and specifications subject to change without notice
Electrical Characteristics@Tj=25o C(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2
Test Conditions VGS=0V, ID=1m A
Min. 60 1
- Typ. 0.073 10 19 5 10 11 6 35 10 160 116 1.58
Max. Units 40 50 3 1 25 ±100 30 V V/℃ mΩ mΩ V S u A u A n A n C n C n C ns ns ns ns p F p F p F Ω
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1m A
RDS(ON)
..
VGS=10V, ID=6A VGS=4.5V, ID=4A VDS=VGS, ID=250u A VDS=10V, ID=6A
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o
VDS=60V, VGS=0V VDS=48V, VGS=0V VGS=±25V ID=6A VDS=48V VGS=4.5V VDS=30V ID=1A RG=3.3Ω,VGS=10V RD=30Ω VGS=0V VDS=25V f=1.0MHz...
