2N6304 Datasheet (Advanced Power Technology) - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

2N6304, RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

The 2N6304 is a silicon NPN transistor designed primarily for use in high gain, low noise general-purpose UHF amplifiers.

www.DataSheet4U.com ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector C

2N6304 Features

* Silicon RF NPN, TO-72, UHF general purpose Low Noise Transistor Noise Figure = 5.0 dB (typ) @ f = 450 MHz High FT - 1.4 GHz (min) @ IC = 10 mAdc Maximum Available Gain = 14 dB (min) @ f = 500 MHz 2 1 4 3 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIP