APT15GP60BDF1
600V
POWER MOS 7 IGBT
TO-247
®
The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
®
- Low Conduction Loss
- Low Gate Charge
- Ultrafast Tail Current shutoff
MAXIMUM RATINGS
Symbol VCES VGE VGEM I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient
- 100 k Hz operation @ 400V, 19A
- 200 k Hz operation @ 400V, 12A
- SSOA rated
All Ratings: TC = 25°C unless otherwise specified.
APT15GP60BDF1 UNIT
600 ±20 ±30 56 27 65 65A @ 600V 250 -55 to 150 300
Watts °C Amps Volts
Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current
@ TC = 25°C
Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction...
