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APT20M11JVR
200V 175A 0.011Ω
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
S G D
S
SO
ISOTOP ®
2 T-
27
"UL Recognized"
• Faster Switching • Lower Leakage
• 100% Avalanche Tested • Popular SOT-227 Package
G
D
S
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
All Ratings: TC = 25°C unless otherwise specified.
APT20M11JVR UNIT Volts Amps
200 175 700 ±30 ±40 700 5.
APT20M11JVR Datasheet
