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MS1226

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

MS1226 Features

* 30 MHz 28 VOLTS IMD = -28 dB POUT = 30 WATTS GP = 18 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUT

MS1226 General Description

The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC PDISS TJ TSTG Co llector-base Voltage Co llector-emitter Voltag.

MS1226 Datasheet (429.16 KB)

Preview of MS1226 PDF

Datasheet Details

Part number:

MS1226

Manufacturer:

Advanced Power Technology

File Size:

429.16 KB

Description:

Rf & microwave transistors hf ssb applications.

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TAGS

MS1226 MICROWAVE TRANSISTORS SSB APPLICATIONS Advanced Power Technology

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