MS1226 Datasheet, Applications, Advanced Power Technology

MS1226 Features

• Applications 30 MHz 28 VOLTS IMD = -28 dB POUT = 30 WATTS GP = 18 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primaril

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MS1226

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Advanced Power Technology

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📄 Datasheet

Description:

Rf & microwave transistors hf ssb applications. The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter

MS1226 Application

• Applications Features 30 MHz 28 VOLTS IMD = -28 dB POUT = 30 WATTS GP = 18 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1226 is a 28

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MS1226

Advanced Power Technology

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