MS3383

RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

Advanced Power Technology

MS3383 Features

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* GOLD METALIZATION POUT = 1.0 W MINIMUM 3.0 GHz GP = 7.0 dB INFINITE VSWR CAPABLE @ RATED CONDITIONS HERMETIC PACKAGE COMMON BASE CONFIGURATION DESCRIPTION: The MS3383 is a common base, hermetically sealed si

MS3383 General Description

The MS3383 is a common base, hermetically sealed silicon NPN microwave power transistor. This device is designed for Class C applications in the 1 - 3 GHz frequency range. Gold metallization and emitter ballasting provide long term reliability and superior ruggedness. ABSOLUTE MAXIMUM RATINGS (Tca.

MS3383 Datasheet (113.13 KB)

MS3383 Datasheet Preview — Preview of MS3383 PDF

Datasheet Details

Part number:

MS3383

Manufacturer:

Advanced Power Technology

File Size:

113.13 KB

Description:

Rf & microwave transistors general purpose amplifier applications.
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS3383 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFI.

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MS3383 MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS Advanced Power Technology

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MS3383 Features

MS3383 General Description

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