BAM120 Datasheet, Transistor, Advanced Semiconductor

✔ BAM120 Features

ηC = 65 % typ. @ 120 W/150 MHz
PG = 9.0 dB typ. @ 120 W/150 MHz
Omnigold™ Metalization System MAXIMUM RATINGS IC VCES VEBO PDISS TJ TSTG θJC 12 A 60 V 4.0 V 140 W

✔ BAM120 Application

up to 150 MHz. PACKAGE STYLE .500 4L FLG FEATURES:
ηC = 65 % typ. @ 120 W/150 MHz
PG = 9.0 dB typ. @ 1

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Part number:

BAM120

Manufacturer:

Advanced Semiconductor

File Size:

173.17kb

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📄 Datasheet

Description:

Npn silicon rf power transistor. The ASI BAM120 is Designed to operate in a collector modulated VHF Power Amplifier Applications up to 150 MHz. PACKAGE STYLE .500

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BAM120 NPN SILICON POWER TRANSISTOR Advanced Semiconductor