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BAM120 - NPN SILICON RF POWER TRANSISTOR

Datasheet Summary

Description

Power Amplifier Applications up to 150 MHz.

Features

  • ηC = 65 % typ. @ 120 W/150 MHz.
  • PG = 9.0 dB typ. @ 120 W/150 MHz.
  • Omnigold™ Metalization System.

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Datasheet preview – BAM120

Datasheet Details

Part number BAM120
Manufacturer Advanced Semiconductor
File Size 173.17 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet BAM120 Datasheet
Additional preview pages of the BAM120 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com BAM120 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BAM120 is Designed to operate in a collector modulated VHF Power Amplifier Applications up to 150 MHz. PACKAGE STYLE .500 4L FLG FEATURES: • ηC = 65 % typ. @ 120 W/150 MHz • PG = 9.0 dB typ. @ 120 W/150 MHz • Omnigold™ Metalization System MAXIMUM RATINGS IC VCES VEBO PDISS TJ TSTG θJC 12 A 60 V 4.0 V 140 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 1.2 °C/W DataSheet4U.com 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER ee DataSh ORDER CODE: ASI10430 CHARACTERISTICS SYMBOL BVCES BVCEO BVEBO hFE COB PG ηC VCC = 27 V IC = 20 mA IC = 50 mA IE = 5.0 mA VCE = 25 V VCE = 27 V TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 60 32 4.0 UNITS V V V IC = 3.5 A f = 1.
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