Part number:
DME3057
Manufacturer:
Advanced Semiconductor
File Size:
52.49 KB
Description:
Schottky medium barrier diode.
DME3057_AdvancedSemiconductor.pdf
Datasheet Details
DME3057 Features
* INCLUDE:
* Small size
* Ideal for MIC MAXIMUM RATINGS: PDISS TJ TSTG θJC 75 mW @ TA = 25 °C -65 °C to +175 °C -65 °C to +175 °C 1000 °C/W NONE CHARACTERISTICS SYMBOL VB VF RS CJ IR = 10 µA IF = 1 mA IF = 10 mA VR = 0 V TC = 25 °C TEST CONDITIONS MINIMUM 3.0 325 f = 1.0 MHz 0.15
DME3057_AdvancedSemiconductor.pdf
Datasheet Details
DME3057
Advanced Semiconductor
52.49 KB
Schottky medium barrier diode.
📁 Related Datasheet
DME3055 Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes (Alpha)
DME3058 Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes (Alpha)
DME3005 Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes (Alpha)
DME3006 Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes (Alpha)
DME3009 Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes (Alpha)
DME3010 Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes (Alpha)
DME3011 Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes (Alpha)
DME3012 Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes (Alpha)
DME3057 Distributor