• Part: LT3014
  • Description: NPN SILICON RF POWER TRANSISTOR
  • Category: Transistor
  • Manufacturer: Advanced Semiconductor
  • Size: 49.19 KB
Download LT3014 Datasheet PDF
Advanced Semiconductor
LT3014
DESCRIPTION : The ASI LT3014 is a mon Emitter Device Designed for General Purpose Class A and AB Amplifier Applications up to 1.0 GHz. FEATURES INCLUDE: - Gold Metalization - Emitter Ballasting - High Gain PACKAGE STYLE .280 4L STUD MAXIMUM RATINGS IC VCB PDISS TJ T STG θ JC 300 m A 45 V 5.0 W @ TC = 25 OC -55 OC to +200 OC -55 OC to +200 OC 33.0 OC/W 1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE CHARACTERISTICS SYMBOL BV CEO BV CES BV EBO h FE PG P1d B IP3 Cob ft IC = 10 m A VBE = 0 V IE = 1.0 m A VCE = 5.0 V VCE = 20 V VCE = 20 V VCE = 20 V VCB = 28 V VCE = 20 V TC = 25 OC NONE TEST CONDITIONS IC = 10 m A MINIMUM TYPICAL MAXIMUM 22 50 3.5 UNITS IC = 100 m A ICQ = 150 m A ICQ = 150 m A f = 1.0 GHz f = 1.0 GHz 20 3.0 27 3.5 29 48 2.0 3.0 3.5 --GHz d Bm d Bm ICQ = 150 m A f = 1.0 GHz POUT = 10 d Bm (2 EQUAL TONES) f = 1.0 MHz ICQ = 150 m A f = 1.0 GHz 3.0 p F GHz A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE - NORTH HOLLYWOOD, CA 91605 - (818) 982-1200 - FAX...