Part number: MRF237
Manufacturer: Advanced Semiconductor
File Size: 23.70KB
Download: 📄 Datasheet
Description: Silicon NPN RF Power Transistor
operating to 225 MHz
PACKAGE STYLE TO-39
MAXIMUM RATINGS
IC VCBO VCEO PDISS TJ TSTG θJC 1.0 A 36 V 18 V 8.0 W @ TC = 2.
The MRF237 is designed for large signal power amplifier applications operating to 225 MHz
PACKAGE STYLE TO-39
MAXIMUM RATINGS
IC VCBO VCEO PDISS TJ TSTG θJC 1.0 A 36 V 18 V 8.0 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 22 °C/W
1 = EMITTER.
Image gallery
TAGS
📁 Related Datasheet
MRF230 - HIGH FREQUENCY TRANSISTOR
(Motorola)
MRF229 MRF230
MRF229 CASE 79-03, STYLE 5
MRF230 CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
f
MAXIMUM RATINGS
Rating
C.
MRF231 - (MRF2xx) FM Transistors
(Motorola)
www..com
.
MRF232 - (MRF2xx) FM Transistors
(Motorola)
www..com
.
MRF233 - (MRF2xx) FM Transistors
(Motorola)
www..com
.
MRF234 - NPN SILICON RF POWER TRANSISTOR
(Advanced Semiconductor)
MRF234
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF234 is Designed for Large-Signal Amplifier Applications to 100 MHz.
PACKAGE STYLE .38.
MRF234 - (MRF2xx) FM Transistors
(Motorola)
www..com
.
MRF235 - (MRF2xx) FM Transistors
(Motorola)
www..com
.
MRF237 - HIGH FREQUENCY TRANSISTOR
(Motorola)
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation T.
MRF238 - NPN SILICON RF POWER TRANSISTOR
(Advanced Semiconductor)
MRF238
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .380" 4L STUD
.112x45° A
C
B
E
E B
H I J
DESCRIPTION:
The MRF238 is Designed for 13.6 V FM .
MRF238 - (MRF2xx) FM Transistors
(Motorola)
www..com
.
