Datasheet Details
Part number:
MRF629
Manufacturer:
Advanced Semiconductor
File Size:
146.58 KB
Description:
NPN SILICON RF POWER TRANSISTOR
Features
* Grounded Emitter
* PG = 8.0 dB at 2.0 W/470 MHz
* Omnigold™ Metalization System MAXIMUM RATINGS IC 400 mA VCEO 16 V VCES 36 V VEBO 4.0 V PDISS 5.0 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 35 °C/W PACKAGE STYLE TO 205AD MILLIMETER S IN
