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MRF629

NPN SILICON RF POWER TRANSISTOR

MRF629 Features

* Grounded Emitter

* PG = 8.0 dB at 2.0 W/470 MHz

* Omnigold™ Metalization System MAXIMUM RATINGS IC 400 mA VCEO 16 V VCES 36 V VEBO 4.0 V PDISS 5.0 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 35 °C/W PACKAGE STYLE TO 205AD MILLIMETER S IN

MRF629 Datasheet (146.58 KB)

Preview of MRF629 PDF

Datasheet Details

Part number:

MRF629

Manufacturer:

Advanced Semiconductor

File Size:

146.58 KB

Description:

Npn silicon rf power transistor.

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TAGS

MRF629 NPN SILICON POWER TRANSISTOR Advanced Semiconductor

MRF629 Distributor