Datasheet4U Logo Datasheet4U.com

MRF630 Datasheet - Advanced Semiconductor

MRF630 NPN SILICON RF POWER TRANSISTOR

MRF630 Features

* Grounded Emitter

* PG = 9.5 dB at 3.0 W/470 MHz

* Omnigold™ Metalization System DIM MAXIMUM RATINGS IC VCEO VCES VEBO PDISS TJ TSTG θJC 1.0 A 16 V 36 V 4.0 V 8.75 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 20 °C/W A B C D E F G H J K L M P R 9.02 9.29 8.01 8.50

MRF630 Datasheet (33.52 KB)

Preview of MRF630 PDF

Datasheet Details

Part number:

MRF630

Manufacturer:

Advanced Semiconductor

File Size:

33.52 KB

Description:

Npn silicon rf power transistor.

📁 Related Datasheet

MRF630 UHF AMPLIFIER TRANSISTOR (Motorola)

MRF604 HIGH FREQUENCY TRANSISTOR (Motorola)

MRF604 NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)

MRF607 HIGH FREQUENCY TRANSISTOR (Motorola)

MRF607 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Advanced Power Technology)

MRF607 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Microsemi Corporation)

MRF616 NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)

MRF626 HIGH FREQUENCY TRANSISTOR (Motorola)

TAGS

MRF630 NPN SILICON POWER TRANSISTOR Advanced Semiconductor

MRF630 Distributor