Part number:
MRF630
Manufacturer:
Advanced Semiconductor
File Size:
33.52 KB
Description:
Npn silicon rf power transistor.
MRF630 Features
* Grounded Emitter
* PG = 9.5 dB at 3.0 W/470 MHz
* Omnigold™ Metalization System DIM MAXIMUM RATINGS IC VCEO VCES VEBO PDISS TJ TSTG θJC 1.0 A 16 V 36 V 4.0 V 8.75 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 20 °C/W A B C D E F G H J K L M P R 9.02 9.29 8.01 8.50
Datasheet Details
MRF630
Advanced Semiconductor
33.52 KB
Npn silicon rf power transistor.
📁 Related Datasheet
MRF630 UHF AMPLIFIER TRANSISTOR (Motorola)
MRF604 HIGH FREQUENCY TRANSISTOR (Motorola)
MRF604 NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
MRF607 HIGH FREQUENCY TRANSISTOR (Motorola)
MRF607 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Advanced Power Technology)
MRF607 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Microsemi Corporation)
MRF616 NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
MRF626 HIGH FREQUENCY TRANSISTOR (Motorola)
MRF630 Distributor