Datasheet4U Logo Datasheet4U.com

ULBM10 NPN SILICON RF POWER TRANSISTOR

ULBM10 Description

ULBM10 NPN SILICON RF POWER TRANSISTOR .
The ASI ULBM10 is Designed for PACKAGE STYLE . Omnigold™ Metalization System B A 45° D C J MAX.

ULBM10 Features

* Omnigold™ Metalization System B A 45° D C J MAXIMUM RATINGS E I IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC O 2.5 A 36 V 16 V 36 V 4.0 V 58 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 7.0 OC/W O O O O DIM A B C D E F G H I J K F G H K MINIMUM inches / mm #8-32

📥 Download Datasheet

Preview of ULBM10 PDF

Datasheet Details

Part number
ULBM10
Manufacturer
Advanced Semiconductor
File Size
17.09 KB
Datasheet
ULBM10_AdvancedSemiconductor.pdf
Description
NPN SILICON RF POWER TRANSISTOR

📁 Related Datasheet

  • ULB121 - NPN SILICON TRANSISTOR (Unisonic Technologies)
  • ULB122 - NPN SILICON TRANSISTOR (Unisonic Technologies)
  • ULB124 - NPN SILICON TRANSISTOR (Unisonic Technologies)
  • ULB4132 - 30V N-CHANNEL POWER MOSFET (UTC)

📌 All Tags

Advanced Semiconductor ULBM10-like datasheet