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VLB10-12F

NPN SILICON RF POWER TRANSISTOR

VLB10-12F Features

* Common Emitter

* PG = 16 dB at 10 W/50 MHz

* Omnigold™ Metalization System MAXIMUM RATINGS IC 2.0 A VCBO 36 V VCES 36 V VEBO 4.0 V PDISS 35 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 5.0 °C/W PACKAGE STYLE .380 4L FLG .112 x 45° B A

VLB10-12F Datasheet (14.22 KB)

Preview of VLB10-12F PDF

Datasheet Details

Part number:

VLB10-12F

Manufacturer:

Advanced Semiconductor

File Size:

14.22 KB

Description:

Npn silicon rf power transistor.

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TAGS

VLB10-12F NPN SILICON POWER TRANSISTOR Advanced Semiconductor

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