VLB10-12F NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor

Description

VLB10-12F NPN SILICON RF POWER TRANSISTOR .
The ASI VLB10-12F is Designed for 12. Common Emitter. PG =.

📥 Download Datasheet

VLB10-12F Datasheet Preview — Preview of VLB10-12F PDF

Datasheet Specifications

Part number: VLB10-12F
Manufacturer: Advanced Semiconductor
File Size: 14.22 KB
Datasheet: VLB10-12F_AdvancedSemiconductor.pdf
Description: NPN SILICON RF POWER TRANSISTOR

Features

* Common Emitter
* PG = 16 dB at 10 W/50 MHz
* Omnigold™ Metalization System MAXIMUM RATINGS IC 2.0 A VCBO 36 V VCES 36 V VEBO 4.0 V PDISS 35 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 5.0 °C/W PACKAGE STYLE .380 4L FLG .112 x 45° B A

VLB10-12F Distributors

📁 Related Datasheet

VLB7050 VLBU1007090

📌 All Tags

VLB10-12F NPN SILICON POWER TRANSISTOR Advanced Semiconductor

Advanced Semiconductor VLB10-12F-like datasheet