NE21935 Datasheet, TRANSISTOR, Advanced

NE21935 Features

• Transistor INCLUDE:
• High frequency 8.0 GH
• Low noise, 1 dB at 0.5 GHz. MAXIMUM RATINGS: IC VCBO VCEO VEBO PDISS TJ TSTG θJC 80 mA 20 V 10 V 1.5 V 580 mW @ TA = 25 °C -65 °C to

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NE21935

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📄 Datasheet

Description:

Npn silicon hi frequncy transistor. The ASI NE21935 is Designed for general purpose and small signal amplifier and oscillator applications up to 6.0 GHz. PACKAGE STYLE

NE21935 Application

• Applications up to 6.0 GHz. PACKAGE STYLE .100 4L PILL FEATURES INCLUDE:
• High frequency 8.0 GH
• Low noise, 1 dB at 0.5 GHz. MA

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NE21935

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