NE64535 NPN SILICON LOW NOISE RF TRANSISTOR

Advanced

NE64535 Description

NE64535 NPN SILICON LOW NOISE RF TRANSISTOR .
The ASI NE64535 is a Common Emitter Device Designed for Low Noise Class A Amplifier Applications up to 4.

NE64535 Features

* INCLUDE:
* NF = 1.6 dB Typical @ 2 GHz
*  S21E2 = 11 dB Typical @ 2 GHz
* Hermetic Ceramic Package MAXIMUM RATINGS: IC VCBO VCEO VEBO PDISS TJ TSTG θJC 60 mA 25 V 12 V 1.5 V 300 mW @ TA ≤ 75 C O -65 °C to +200 °C -65 °C to +150 °C 85 °C/W TC = 25 °C 1 = Collector 2 & 4

📥 Download Datasheet

NE64535 Datasheet Preview — Preview of NE64535 PDF

Datasheet Details

Part number: NE64535
Manufacturer: Advanced
File Size: 18.84 KB
Datasheet: NE64535_AdvancedSemiconductor.pdf
Description: NPN SILICON LOW NOISE RF TRANSISTOR

📁 Related Datasheet

NE645 - Dolby Noise Reduction (NXP)
NE646 - Dolby Noise Reduction (NXP)
NE649 - Low Voltage Dolby Noise Reduction Circuit (Signetics)
NE600 - 1GHz LNA and mixer (NXP Semiconductors)
NE602 - NE602 (ETC)
NE602A - Double-Balanced Mixer and Oscillator (Philips)
NE604A - High Performance Low Power FM IF System (Philips)
NE605 - HIGH PERFORMANCE LOW POWER MIXER FM IF SYSTEM (NXP)

📌 All Tags

NPN SILICON LOW NOISE TRANSISTOR Advanced

Advanced NE64535-like datasheet