UT8R512K8 - 512K x 8 SRAM

Product Overview

Aeroflex Circuit Technology

Part number	UT8R512K8
Manufacturer	Aeroflex Circuit Technology
File Size	227.68 KB
Description	512K x 8 SRAM
Datasheet	UT8R512K8 Datasheet
Additional preview pages of the UT8R512K8 datasheet.

15ns maximum access time Asynchronous operation for compatibility with industry- standard 512K x 8 SRAMs CMOS compatible inputs and output levels, three-state bidirectional data bus - I/O Voltage 3.3 volts, 1.8 volt core Operational environment: - Intrinsic total-dose: 300K rad(Si) - SEL Immune >100 MeV-cm2/mg - LETth (0.25): 53.0 MeV-cm2/mg - Memory Cell Saturated Cross Section 1.67E-7cm2/bit - Neutron Fluence: 3.0E14n/cm2 - Dose Rate - Upset 1.0E9 rad(Si)/sec - Latchup >1.0E11 rad(Si)/.

📁 Similar Datasheet

Other Datasheets by Aeroflex Circuit Technology

Published: Oct 4, 2016 |