AT-42010, AT-42010_Agilent(Hewlett - Up to 6 GHz Medium Power Silicon Bipolar Transistor

Agilent(Hewlett-Packard)

Datasheet Details

Part number	AT-42010, AT-42010_Agilent(Hewlett
Manufacturer	Agilent(Hewlett-Packard)
File Size	52.90 KB
Description	Up to 6 GHz Medium Power Silicon Bipolar Transistor
Datasheet	AT-42010_Agilent(Hewlett-Packard).pdf
Note	This datasheet PDF includes multiple part numbers: AT-42010, AT-42010_Agilent(Hewlett. Please refer to the document for exact specifications by model.

Hewlett-Packard’s AT-42010 is a general purpose NPN bipolar transistor that offers excellent high frequency performance.

High Output Power: 12.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz.
High Gain at 1␣ dB␣ Compression: 14.0 dB Typical G1 dB at 2.0␣ GHz 9.5 dB Typical G1 dB at 4.0␣ GHz.
Low Noise Figure: 1.9 dB Typical NFO at 2.0␣ GHz.
High Gain-Bandwidth Product: 8.0 GHz Typical fT.
Hermetic Gold-ceramic Microstrip Package functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to.

📁 AT-42010 Similar Datasheet

Other Datasheets by Agilent(Hewlett-Packard)

Published: Mar 24, 2005 |