AT-42010, AT-42010_Agilent(Hewlett Datasheet - Agilent(Hewlett-Packard)

AT-42010 Up to 6 GHz Medium Power Silicon Bipolar Transistor

Hewlett-Packard’s AT-42010 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42010 is housed in a hermetic, high reliability 100 mil ceramic package. The 4 micron emitter-toemitter pitch enables this transistor to be used in many different 5965-891.

AT-42010 Features

* High Output Power: 12.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz

* High Gain at 1␣ dB␣ Compression: 14.0 dB Typical G1 dB at 2.0␣ GHz 9.5 dB Typical G1 dB at 4.0␣ GHz

* Low Noise Figure: 1.9 dB Typical NFO at 2.0␣ GHz

* High Gain-Bandwidth Pr

AT-42010_Agilent(Hewlett-Packard).pdf

AT-42010 Datasheet Preview — This datasheet PDF includes multiple part numbers: AT-42010, AT-42010_Agilent(Hewlett. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

AT-42010, AT-42010_Agilent(Hewlett

Manufacturer:

Agilent(Hewlett-Packard)

File Size:

52.90 KB

Description:

Up to 6 ghz medium power silicon bipolar transistor.

Note:

This datasheet PDF includes multiple part numbers: AT-42010, AT-42010_Agilent(Hewlett.
Please refer to the document for exact specifications by model.

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TAGS

AT-42010 AT-42010_Agilent(Hewlett GHz Medium Power Silicon Bipolar Transistor Agilent(Hewlett-Packard)

AT-42010 Distributor