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AT42070 Datasheet Up To 6 Ghz Medium Power Silicon Bipolar Transistor

Manufacturer: Agilent(Hewlett-Packard)

Overview: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number AT42070
Manufacturer Agilent(Hewlett-Packard)
File Size 52.47 KB
Description Up to 6 GHz Medium Power Silicon Bipolar Transistor
Datasheet AT42070 AT4 Datasheet (PDF)

General Description

Hewlett-Packard’s AT-42070 is a general purpose NPN bipolar transistor that offers excellent high frequency performance.

The AT-42070 is housed in a hermetic, high reliability gold-ceramic 70 mil microstrip package.

The 4 micron emitter-to-emitter pitch enables this transistor to be used in many 5965-8912E 4-164 AT-42070 Absolute Maximum Ratings Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2,3] Junction Temperature Storage Temperature Units V V V mA mW °C °C Absolute Maximum[1] 1.5 20 12 80 600 200 -65 to 200 Thermal Resistance [2,4]: θjc = 150°C/W Notes: 1.

Key Features

  • High Output Power: 21.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz.
  • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0␣ GHz 10.0 dB Typical G1 dB at 4.0␣ GHz.
  • Low Noise Figure: 1.9 dB Typical NFO at 2.0␣ GHz.
  • High Gain-Bandwidth Product: 8.0 GHz Typical fT.
  • Hermetic Gold-ceramic Microstrip Package different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that ar.

More Datasheets from Agilent(Hewlett-Packard)

Part Number Description
AT41486 Up to 6 GHz Low Noise Silicon Bipolar Transistor
AT41511 General Purpose/ Low Noise NPN Silicon Bipolar Transistor
AT41533 General Purpose/ Low Noise NPN Silicon Bipolar Transistor

AT42070 Distributor