Description
Applications
The 1N5711, 1N5712, 5082-2800/ 10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage.Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D converting, video detecting, frequency discriminating, sampling, and wave shaping.The 5082-2835 is a passivated Schottky diode in a low cost glass package.It is optimized for low turn-on voltage.The 5082-28
Features
- Low Turn-On Voltage As Low as 0.34 V at 1 mA.
- Pico Second Switching Speed.
- High Breakdown Voltage Up to 70 V.
- Matched Characteristics Available.
5082-2800-Agilent.pdf