8205
AiT Semiconductor
813.36kb
N-channel power mosfet. FEATURES The AM8205 uses advanced trench technology to
TAGS
📁 Related Datasheet
82012 - Phase Control SCR
(Powerex Power Semiconductors)
.
8203 - 64K DYNAMIC RAM CONTROLLER
(Intel Corporation)
..
DataSheet 4 U .
..
DataSheet 4 U .
..
DataSheet 4 U .
..
DataSh.
8205 - LOW-DROPOUT REGULATORS
(Allegro MicroSystems)
8205
PRELIMINARY INFORMATION
(subject to change without notice) December 6, 1999
NC OR ADJ* OUT
LOW-DROPOUT REGULATORS — HIGH EFFICIENCY
Designed spe.
8205 - Dual N-Channel Power MOSFET
(Fortune Semiconductor)
REV. 1.9 FS8205-DS-19_EN
AUG 2016
For RefPerrFoepOnecRrteTieUOsnNlEy’
Datasheet
FS8205
Dual N-Channel Enhancement Mode Power MOSFET
Fortune Semico.
8205A - Dual N-Channel MOSFET
(RZC Microelectronics)
8205A
Dual N-Channel MOSFET
.
GENERAL DESCRIPTION
The 8205Ais a dual N-channel MOS Field Effect Transistor which uses advanced trench technology to p.
8205A - Dual N-Channel MOSFET
(HSMC)
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200701 Issued Date : 2007.03.01 Revised Date : 2007.03.12 Page No. : 1/4
8205A
Dual N-Channel Enh.
8205A - N-channel power MOSFET
(ETC)
N MOSFET
8205A/8205B/8205C
1.
N8205A/8205B/ 8205C 、。 8205A/8205B/8205C 。
2.
z
z
z 2.5V
z VBDSB=20V z IDB =B 6A @ VGB S=B 4.5V z 8205A ：.
8205A - Dual N-Channel MOSFET
(HOTTECH)
Plastic-Encapsulate Mosfets
N-Channel Enhancement Mode Power MOSFET
Description
The 8205A uses advanced trench technology to provide excellent RDS(ON.
8205A - MOSFET
(GOFORD)
GOFORD
8205A
P R ODUC T S UMMAR Y
VDSS RDS(ON) ID
@ 4.0V (typ)
20V
21mΩ
4A
- D1
D2
G1
G2
S1
S2
F E AT UR E S S uper high dense cell desig.
8205B - N-channel power MOSFET
(ETC)
N MOSFET
8205A/8205B/8205C
1.
N8205A/8205B/ 8205C 、。 8205A/8205B/8205C 。
2.
z
z
z 2.5V
z VBDSB=20V z IDB =B 6A @ VGB S=B 4.5V z 8205A ：.
